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Amphoteric oxide semiconductors for energy conversion devices: a tutorial review

Journal

CHEMICAL SOCIETY REVIEWS
Volume 42, Issue 5, Pages 1961-1972

Publisher

ROYAL SOC CHEMISTRY
DOI: 10.1039/c2cs35393h

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Funding

  1. Natural Science and Engineering Research Council (NSERC)

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In this tutorial review, we discuss the defect chemistry of selected amphoteric oxide semiconductors in conjunction with their significant impact on the development of renewable and sustainable solid state energy conversion devices. The effect of electronic defect disorders in semiconductors appears to control the overall performance of several solid-state ionic devices that include oxide ion conducting solid oxide fuel cells (O-SOFCs), proton conducting solid oxide fuel cells (H-SOFCs), batteries, solar cells, and chemical (gas) sensors. Thus, the present study aims to assess the advances made in typical n- and p-type metal oxide semiconductors with respect to their use in ionic devices. The present paper briefly outlines the key challenges in the development of n- and p-type materials for various applications and also tries to present the state-of-the-art of defect disorders in technologically related semiconductors such as TiO2, and perovskite-like and fluorite-type structure metal oxides.

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