Journal
CHEMICAL PHYSICS LETTERS
Volume 538, Issue -, Pages 99-101Publisher
ELSEVIER SCIENCE BV
DOI: 10.1016/j.cplett.2012.04.041
Keywords
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Funding
- National Science Foundation of China [51102115]
- Natural Science Foundation of Guangdong Province, China [10451063201005253]
- Specialized Research Fund for the Doctoral Program of Higher Education of China [20104401120005]
- Fundamental Research Funds for the Central Universities [21611603, 21611424]
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The nature of contacts between ZnO semiconductor nanowires and metal pads has attracted great research interests since its impact on enhancing sensitivity of the sensors. Herein, ZnO nanowire arrays were synthesized by a scalable wet chemical method and ZnO nanowire-polymer composite strain sensors were fabricated by utilizing Schottky contact. The electrical transport response to strain was attributed to piezoelectric-effect-induced Schottky barrier height changes at the metal-semiconductor junction under various strained states. When the strain increased from 0% to 0.12%, the average barrier height change increased to 26 meV, inducing sensitive current changes in these strain sensors. (C) 2012 Elsevier B.V. All rights reserved.
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