Journal
CHEMICAL PHYSICS LETTERS
Volume 484, Issue 4-6, Pages 266-270Publisher
ELSEVIER SCIENCE BV
DOI: 10.1016/j.cplett.2009.11.051
Keywords
-
Funding
- National Natural Science Foundation of China (NSFC) [20621091, J0730429]
- Chunhui project and '111' project
Ask authors/readers for more resources
The inert surface of graphitic boron nitride sheet (g-BN) hinders the application of this new nanomaterial in electronic devices. Herein, we exploited the possibilities of functionalizing g-BN by introducing Al-dopant and defects (Stone-Wales or vacancy), and studied the interactions between the modified g-BN and CO molecule. The doped and defective g-BN exhibit much higher affinities with the probe molecule than pristine g-BN. The vacancy-defected g-BN shows narrower band gap and spontaneous magnetization upon CO adsorption. These results may help to seek appropriate chemical modification methods to widen the application fields of the g-BN nanomaterials. (C) 2009 Published by Elsevier B. V.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available