Journal
CHEMICAL PHYSICS LETTERS
Volume 467, Issue 4-6, Pages 313-317Publisher
ELSEVIER SCIENCE BV
DOI: 10.1016/j.cplett.2008.11.071
Keywords
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Funding
- Council (RGC) of Hong Kong [HKU 7025/06P]
- CRCG of The University of Hong Kong
- NNSFC [10523001, 10774065]
- National Key Projects for Basic Researches of China [2006CB921802]
- Jiangsu Planned Projects [0701033B]
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SrTiO3 (x) thin films with various oxygen vacancies were fabricated by laser molecular beam epitaxy. The out-of-plane and in-plane lattice constants of the films increase with increasing oxygen vacancies, which was attributed to the increase of Ti3+ ions in the films. Ti3+ ions are formed only in the film inner which is revealed from X-ray photoemission spectroscopy (XPS). With varying the oxygen content, a metal-to-semiconductor transition was observed. The oxygen contents in the films, determined from lattice parameters and XPS are very consistent with each other, which shows quasi-quantitative methods to measure oxygen content in thin films. (c) 2008 Elsevier B. V. All rights reserved.
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