Electrical conductivity measurement of silicon wire prepared by CVD

The electrical resistivity of a silicon nanowire formed from Si2H6 by CVD was measured using micro-probes equipped with SEM. The resistivity of 6.58 x 10(5) Omega cm at room temperature was obtained from the current-voltage (I-V) curve for the wire with both ends fused to the probes. The non-linear I-V curve measured only by contacting the wire with the probes could be explained by the resistivity in a series of silicon and dielectric thin oxide films formed on the silicon nanowires. (C) 2008 Elsevier B. V. All rights reserved.