Journal
CHEMICAL COMMUNICATIONS
Volume 50, Issue 22, Pages 2847-2850Publisher
ROYAL SOC CHEMISTRY
DOI: 10.1039/c3cc47860b
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Funding
- National Natural Science Foundation of China [50872063]
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We present a highly transparent heterojunction photodiode by precisely aligning n-type SnO2 nanobelts on top of a p-type NiO thin film. This p-n junction diode demonstrates stable rectifying characteristics as well as greatly enhanced ultraviolet photoresponse, which exhibits an ultrahigh photosensitivity of up to 10(5) with accelerated response speed under reverse bias.
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