Journal
CHEMICAL COMMUNICATIONS
Volume 50, Issue 76, Pages 11226-11229Publisher
ROYAL SOC CHEMISTRY
DOI: 10.1039/c4cc03911d
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Funding
- STARnet center
- C-SPIN (Center for Spintronic Materials, Interfaces, and Novel Architectures), through the Semiconductor Research Corporation
- MARCO
- DARPA
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Oxygen annealing of thick MoS2 films results in randomly oriented and controllable triangular etched shapes, forming pits with uniform etching angles. These etching morphologies differ across the sample based on the defect sites situated on the basal plane surface, forming numerous features in different bulk sample thicknesses.
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