Journal
CHEMICAL COMMUNICATIONS
Volume 50, Issue 10, Pages 1224-1226Publisher
ROYAL SOC CHEMISTRY
DOI: 10.1039/c3cc47224h
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Funding
- National Research Foundation of Korea (NRF)
- Korean government (MSIP) [2006-0050684]
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We introduce a facile method to prepare an n-type reduced graphene oxide field effect transistor at room temperature via a typical Benkeser reduction using lithium and ethylenediamine.
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