4.7 Article

Thienopyrrolyl dione end-capped oligothiophene ambipolar semiconductors for thin film- and light emitting transistors

Journal

CHEMICAL COMMUNICATIONS
Volume 47, Issue 43, Pages 11840-11842

Publisher

ROYAL SOC CHEMISTRY
DOI: 10.1039/c1cc14179a

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Funding

  1. Consorzio MIST-ER through project FESR-tecnopolo AMBIMAT
  2. EU
  3. Italian MISE

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The design, synthesis and structure-property investigation of a new thienopyrrolyl dione substituted oligothiophene material showing reduced band gap energy, low lying LUMO energy level and ambipolar semiconducting behaviour is described.

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