Ultrafast room temperature NH3 sensing with positively gated reduced graphene oxide field-effect transistors

Reduced graphene oxide (R-GO) under a positive gate potential (n-type conductance) exhibits an instantaneous response and fast recovery for NH3 sensing, far superior to the performance in p-mode at zero/negative gate potential. Our findings have important implications for fast, repeatable, room temperature gas detection using graphene/R-GO.