Journal
CHEMICAL COMMUNICATIONS
Volume 46, Issue 27, Pages 4917-4919Publisher
ROYAL SOC CHEMISTRY
DOI: 10.1039/c000175a
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Funding
- Knowledge Innovation Engineering of Chinese Academy of Sciences [KJCX2-YW-W22, YYYJ-0701]
- National Natural Science Foundation of China [50972162, 50702073]
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Controlled sublimation of silicon on a SiC surface based on pulsed electron irradiation (PEI) is presented as an effective route to quality graphene. The PEI allows us to obtain graphene in millimetre-scale within three monolayers, and is a potential candidate for preparing high quality large graphene with controlled layers.
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