Journal
CHEMICAL COMMUNICATIONS
Volume 46, Issue 8, Pages 1206-1208Publisher
ROYAL SOC CHEMISTRY
DOI: 10.1039/b919722b
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High quality nonpolar m-plane GaN films were successfully grown on LiGaO2 (100) substrates for the first time. This m-plane GaN/LiGaO2 (100) system opens a new approach for realizing highly-efficient nitride devices.
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