Journal
JOURNAL OF APPLIED PHYSICS
Volume 87, Issue 5, Pages 2382-2385Publisher
AMER INST PHYSICS
DOI: 10.1063/1.372238
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Time domain spectroscopy has been used to measure the room temperature transmission of highly doped GaAs in the frequency range from 0.2 to above 3 THz. We studied n- and p-type layers, with carrier densities between 10(16) and 2 x 10(18) cm(-3), which had been grown on undoped GaAs substrates. Transmission spectra could be fitted within experimental error by using a Drude model for the conductivity. Fitted carrier densities for both carrier types and mobilities for p-type GaAs were in good agreement with the results of Hall measurements. In the case of n-GaAs, the optically determined mobility appeared to underestimate slightly the Hall mobility. (C) 2000 American Institute of Physics. [S0021-8979(00)04404-2].
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