Journal
JOURNAL OF APPLIED PHYSICS
Volume 87, Issue 1, Pages 606-608Publisher
AMER INST PHYSICS
DOI: 10.1063/1.371912
Keywords
-
Categories
Ask authors/readers for more resources
Pulsed-laser deposition was used to make thin films of NdNiO3 on a variety of substrates. The films were found to be single phase perovskite in all cases. However, the transport behavior varied strongly as a function of the substrate used: the films were semiconducting on MgO, but showed a metal-semiconductor phase transition on SrTiO3 and NdGaO3. The best electrical-switching properties corresponded to films grown on NdGaO3, with the resistivity changing abruptly by more than two orders of magnitude at T(MI)similar to 185 K. Very thin films (similar to 35 nm) were also grown on NdGaO3 substrates to investigate the epitaxial strain effect on the transition. It appears that biaxial tensile strain stabilizes the high temperature metallic phase, thus lowering T-MI. (C) 2000 American Institute of Physics. [S0021- 8979(99)05424-9].
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available