4.6 Article

Zinc self-diffusion, electrical properties, and defect structure of undoped, single crystal zinc oxide

Journal

JOURNAL OF APPLIED PHYSICS
Volume 87, Issue 1, Pages 117-123

Publisher

AMER INST PHYSICS
DOI: 10.1063/1.371832

Keywords

-

Ask authors/readers for more resources

Zinc self-diffusion was measured in single crystal zinc oxide using nonradioactive Zn-70 as the tracer isotope and secondary ion mass spectrometry for data collection. Crystal mass was closely monitored to measure ZnO evaporation. Diffusion coefficients were isotropic with an activation energy of 372 kJ/mol. Zinc self-diffusion is most likely controlled by a vacancy mechanism. Electrical property measurements exhibit a plateau in conductivity at intermediate pO(2) with an increase in reducing atmospheres. An analysis of the defect structure is presented that indicates that oxygen vacancies are probably the intrinsic ionic defects responsible for n-type conductivity in reducing atmospheres. (C) 2000 American Institute of Physics. [S0021- 8979(00)08701-6].

Authors

I am an author on this paper
Click your name to claim this paper and add it to your profile.

Reviews

Primary Rating

4.6
Not enough ratings

Secondary Ratings

Novelty
-
Significance
-
Scientific rigor
-
Rate this paper

Recommended

No Data Available
No Data Available