Journal
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
Volume 39, Issue 9B, Pages 5426-5428Publisher
INST PURE APPLIED PHYSICS
DOI: 10.1143/JJAP.39.5426
Keywords
thin film; PZT Al doping; ferroelectric properties; leakage current; fatigue property; chemical solution deposition process
Categories
Ask authors/readers for more resources
2.5 and 5 mol% Al were doped to lead titanate zirconate (PZT) thin films using a chemical solution deposition process, and ferroelectric properties of Al-doped PZT thin films were compared with those of nondoped PZT film. Doped Al seems to be substituted at the Zr/Ti site (B site) since the c/a ratio decreased with increasing Al content. The shape of a P-E hysteresis curve of the thin films did not show remarkable differences between nondoped and Al-doped PZT. Values of P-s, P, and E-c of the 2.5 mol% Al-doped PZT thin films were about 43 muC/cm(2), 19 muC/cm(2) and 58 kV/cm, respectively. On the other hand, the leakage current of the thin films showed a tendency to decrease with increasing Al content. The fatigue properties of the Al-doped PZT thin film showed a slight improvement, because the reduction rate of the fatigue was smaller than that of a nondoped PZT thin film.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available