Journal
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
Volume 39, Issue 3A, Pages 1006-1012Publisher
JAPAN J APPLIED PHYSICS
DOI: 10.1143/JJAP.39.1006
Keywords
transient enhanced diffusion; high-concentration diffusion; arsenic; silicon; simulation; EOR defects; arsenic complex formation; arsenic precipitation; boron segregation
Categories
Ask authors/readers for more resources
We have simulated the transient enhanced diffusion (TED) of high-concentration arsenic (As) in silicon during postimplantation annealing. A unified simulation was done, based on models for As diffusion, for TED by self-interstitial clusters, and for end-of-range (EOR) defects. We have taken into account As complex formation and As precipitation, which cause the As deactivation. We have satisfactorily fitted As depth profiles at high doses (1-5 x 10(15) cm(-2)) in a wide range of annealing conditions (750-1000 degrees C). The As complex formation plays an important role in determining the diffusion profiles through the self-interstitial emission upon the formation at lower temperatures and through As deactivation at higher temperatures. The simulation results suggest that boron (B) segregation toward the As tail regions is associated with self-interstitial distributions determined by EOR defects and As profiles.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available