4.4 Article

Thermophysical properties measurement of molten silicon by high-temperature electrostatic levitator: density, volume expansion, specific heat capacity, emissivity, surface tension and viscosity

Journal

JOURNAL OF CRYSTAL GROWTH
Volume 208, Issue 1-4, Pages 313-321

Publisher

ELSEVIER SCIENCE BV
DOI: 10.1016/S0022-0248(99)00437-6

Keywords

molten silicon; density; heat capacity; surface tension; viscosity; electrostatic levitator

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Thermophysical properties of molten silicon measured by the high-temperature electrostatic levitator at JPL are presented. The properties include the density, the volume expansion, the constant pressure specific heat capacity, the hemispherical total emissivity, the surface tension and the viscosity. Over the temperature range investigated (1350-1850 K), the measured liquid density showed a quadratic nature expressed by rho(T) = 2.58 - 1.59 x 10(-4) (T - T-m) - 1.15 x 10(-7) (T - T-m)(2) g/cm(3) with T-m = 1687 K. The volume expansion with respect to the melting point could be expressed by V(T)/V-m = 1 + 6.18 x 10(-5) (T - T-m) + 4.72 x 10(-8) (T - T-m)(2). The hemispherical total emissivity of molten silicon at the melting temperature was 0.18, and the constant pressure specific heat was determined over a 500 K around the melting point. The measured surface tension and the viscosity could be expressed respectively by sigma(T) = 765 - 0.016(T - T-m) mN/m, and eta(T) = 0.75 - 1.22 x 10(-3) (T - T-m) mPa s. (C) 2000 Published by Elsevier Science B.V. All rights reserved.

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