Journal
SURFACE & COATINGS TECHNOLOGY
Volume 125, Issue 1-3, Pages 308-312Publisher
ELSEVIER SCIENCE SA
DOI: 10.1016/S0257-8972(99)00580-0
Keywords
carbon nitride; infrared (IR) absorption spectroscopy; pulsed laser deposition; X-ray photoelectron spectroscopy (XPS)
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Amorphous carbon nitride films are deposited at room temperature on silicon substrates by ArF excimer laser (193 nm) ablation of a graphite target in nitrogen atmosphere. By tuning the process parameters, fine control of the carbon-carbon and carbon-nitrogen bond configuration is achieved in a broad range as followed by X-ray photoelectron spectroscopy (XPS) and infrared (IR) absorption spectroscopy. Based on the comparative and quantitative analysis of changes in measured IR versus XPS spectra as a function of reactive gas pressure, laser fluence and target-to-substrate distance, and on a critical review of the existing interpretation of IR data, an assignment of the components of the broad band extending from 900 to 1900 cm(-1) in the IR spectra to specific carbon-carbon and carbon-nitrogen bond configurations is proposed. (C) 2000 Elsevier Science S.A. All rights reserved.
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