Journal
SOLID STATE COMMUNICATIONS
Volume 116, Issue 9, Pages 495-499Publisher
PERGAMON-ELSEVIER SCIENCE LTD
DOI: 10.1016/S0038-1098(00)00361-6
Keywords
disordered systems; electronic transport; quantum Hall effect
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We have studied Shubnikov-de Haas oscillations in a two-dimensional electron system in silicon at low electron densities. Near the metal-insulator transition, only 'spin' minima of the resistance at Landau-level filling factors v = 2, 6, 10, and 14 are seen, while the 'cyclotron' minima at v = 4, 8, and 12 disappear. A simple explanation of the observed behavior requires a giant enhancement of the spin splitting near the metal-insulator transition. (C) 2000 Elsevier Science Ltd. All rights reserved.
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