Journal
CHEMICAL PHYSICS
Volume 251, Issue 1-3, Pages 167-179Publisher
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DOI: 10.1016/S0301-0104(99)00301-8
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We directly measure ultrafast changes in the dielectric function of GaAs over the spectral range from the near-IR to the near-UV caused by intense 70-fs laser excitation. The dielectric function reveals the nature of the ultrafast phase transformations generated in the material, including a semiconductor-to-metal transition for the strongest excitations. Although the electron and lattice dynamics are complex when large carrier densities are excited - between 1 and 20% of the valence electrons - the dominant processes and their timescales can be deduced. (C) 2000 Elsevier Science B.V. All rights reserved.
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