Pseudodonor nature of the D-I defect in 4H-SiC

We use the recent findings about the pseudodonor character of the D-I defect to establish an energy-level scheme in the band gap for the defect, predicting the existence of a hole trap at about 0.35 eV above the valence band. Using minority carrier transient spectroscopy, we prove that the D-I defect indeed is correlated to such a hole trap. In addition, we show that the D-I defect is not correlated to the Z(1/2) electron trap, in contrast to what was previously reported. (C) 2001 American Institute of Physics.