Journal
SOLID STATE COMMUNICATIONS
Volume 120, Issue 7-8, Pages 279-282Publisher
PERGAMON-ELSEVIER SCIENCE LTD
DOI: 10.1016/S0038-1098(01)00391-X
Keywords
semiconductors; phase transitions; recombination and trapping
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We apply parallel replica dynamics to simulate the growth of silicon interstitial clusters. Existing interstitial clusters are efficient traps for mobile interstitial and di-interstitial defects. For clusters involving more than four interstitials, many metastable structures axe achieved by local bonding rearrangements. The shape of interstitial nuclei critically determines the final interstitial clusters. Once an elongated cluster is formed, additional captured interstitials diffuse in the chain direction and eventually settle at the chain ends, resulting in further elongation. (C) 2001 Published by Elsevier Science Ltd.
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