Room temperature UV emission of MgxZn1-xO films

II-VI wide band-gap semiconductor ternary MgxZn1-xO nanocrystalline films have been successfully formed on conductive glass from ZnO powder by electrophoresis deposition (EDP). In comparison with ZnO powder, the MgxZn1-xO films presented a more preferential crystalline orientation. Room temperature (RT) PL spectra of MgxZn1-xO films revealed a stronger bandedge ultraviolet (UV) emission and a narrower FWMH of 13 nm than that of ZnO powder. The UV emission peak of MgxZn1-xO film is located at the range of 375-381 nm with a small blue shift from that of ZnO powder. In addition, the ratio of PL peak intensity of band-edge emission to the deep-level emission in MgxZn1-xO films reached as high as 135:1 while compared with 23:1 of ZnO powder under the same He-Cd laser excitation level. Consequently, these electrophoretic deposition (EPD) MgxZn1-xO films exhibited a good quality for excitonic emission at RT. (C) 2001 Elsevier Science Ltd. All rights reserved.