Journal
JOURNAL OF MATERIALS CHEMISTRY
Volume 11, Issue 5, Pages 1486-1490Publisher
ROYAL SOC CHEMISTRY
DOI: 10.1039/b009923f
Keywords
Tin thiolate; Thin film; Chemical vapour deposition; Aerosol-assisted chemical vapour deposition; Tin sulfide
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Aerosol-assisted chemical vapour deposition of SnS has been achieved on glass substrates from the single source precursor [Sn(SCH2CH2S)(2)] at 400-550 degreesC. In the presence of H2S the precursor produces films of SnS2 at 350 degreesC, Sn2S3 at 400 degreesC and SnS at 500 degreesC. The tin sulfides were analysed by Raman (SnS2 312 and 215 cm(-1); Sn2S3 307, 251, 234, 183, 87, 71, 60, 52 and 36 cm(-1) and SnS 288, 220, 189, 163 and 96 cm(-1)), EDAX, SEM and band gap measurements (SnS 1.15 eV, SnS2 2.20 eV). Growth rates were of the order of 15 nm min(-1).
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