Journal
SOLAR ENERGY MATERIALS AND SOLAR CELLS
Volume 65, Issue 1-4, Pages 385-392Publisher
ELSEVIER SCIENCE BV
DOI: 10.1016/S0927-0248(00)00117-3
Keywords
polycrystalline silicon; thin-film solar cells; aluminium-induced crystallisation; solid-solid interaction; carrier concentration
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Aluminium-induced crystallisation of amorphous silicon is studied for the formation of continuous polycrystalline silicon thin-films on low-temperature glass substrates. It is shown to be a promising alternative to laser crystallisation and solid-phase crystallisation. Silicon grain sizes of larger than 10 mum are achieved at temperatures of around 475 degreesC within annealing times as short as 1 h. The Al doping concentration of the poly-Si films depends on the annealing temperature, as revealed by Hall effect measurements. A poly-Si/Al/glass structure presented here can serve as a seeding layer for the epitaxial growth of polycrystalline silicon thin-film solar cells, or possibly as the base material with the back contact incorporated. (C) 2001 Elsevier Science B.V. All rights reserved.
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