Journal
MATERIALS RESEARCH BULLETIN
Volume 36, Issue 1-2, Pages 171-179Publisher
PERGAMON-ELSEVIER SCIENCE LTD
DOI: 10.1016/S0025-5408(00)00481-5
Keywords
ceramics; electronic materials; dielectric properties; ferroelectricity
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Dielectric and field-induced strain behavior of the Pb0.97Y0.02[(Zr0.6Sn0.4)(1-y)Ti-y]O-3 ceramics (PYZST) has been investigated as a function of Ti4+ content (0.07 less than or equal toy less than or equal to0.20) and temperature. A structural change from the orthorhombic to rhombohedral phase was observed with increasing Ti4+ concentration, accompanied by the antiferroelectric to ferroelectric phase transition, As the temperature increases from the room temperature, the specimens of the composition with y less than or equal to0.12 undergo phase transitions from the ferroelectric rhombohedral to paraelectric cubic through antiferroelectric orthorhombic. The specimens with compositions near the antiferroelectric-ferroelectric phase boundary exhibited digital-type strain curve with the shape memory effect due to the antiferroelectric to ferroelectric phase transition. In the specimen of y=0.085, the electric field for the antiferroelectric to ferroelectric phase transition was 32kV/cm and the field-induced strain accompanied by the phase transition was 3x10(-3). In addition, a temperature-composition phase diagram was determined from the study of crystal structure and the dielectric and field-induced strain properties. (C) 2001 Elsevier Science Ltd. All rights reserved.
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