Journal
IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS
Volume 12, Issue 1, Pages 3-5Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/7260.975716
Keywords
barium strontium titanate; (Ba,Sr)TiO3; BST; ferroelectric; MOCVD; thin film; tunable capacitor; varactor
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The measurement results for thin film barium strontium titanate (BST) based voltage tunable capacitors intended for: RF applications are reported. At 9 V dc, BST capacitors fabricated using MOCVD (metalorganic chemical vapor deposition) method achieved 71% (3.4: 1) tunability. The measured device quality, factor (Q) for BST varactors is comparable with the device Q for commercially available varactor diodes of similar capacitance. The typical dielectric loss tangent was in the range 0.003-0.009 at VHF. Large signal measurement and modeling results for BST thin film capacitors are also presented.
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