Journal
CERAMICS INTERNATIONAL
Volume 44, Issue 17, Pages 21451-21460Publisher
ELSEVIER SCI LTD
DOI: 10.1016/j.ceramint.2018.08.206
Keywords
Cutting-edge radius; Grinding wheel speed; Critical chip formation thickness; Critical ductile-brittle transition thickness; Grinding force; Ground surface quality
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Funding
- National Natural Science Foundation of China [51275231]
- Graduate Innovation Fund of Nanjing University of Aeronautics and Astronautics [kfij20160522]
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A finite element model (FEM) of single-grain surface grinding of SiC has been established to understand the effects of the cutting-edge radius and grinding wheel speed on SiC chip formation. Based on the mechanic deformation behavior of SiC, the critical chip formation thickness and critical ductile-brittle transition thickness were found. Results obtained show that critical ductile-brittle transition thickness has a peak value at R-c = 1.25 mu m and v(s) = 80 m/s respectively. Normal grinding force increased firstly with the increasing cutting edge radius and then declined. The critical cutting edge radius R-c = 1.25 mu m and grinding wheel speed v(s) = 80 m/s were determined depending on the variation of critical chip formation thickness, critical ductile-brittle transition thickness, grinding force, ground surface quality. Finally, the simulation results were verified experimentally by an indirect single diamond grain scratching SiC ceramics test.
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