Journal
CERAMICS INTERNATIONAL
Volume 44, Issue 18, Pages 22108-22112Publisher
ELSEVIER SCI LTD
DOI: 10.1016/j.ceramint.2018.08.322
Keywords
Tungsten disulfide; Chemical vapor deposition; Magnetron sputtering; Optical property; Growth mechanism
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Funding
- National Natural Science Foundation of China [KYZ203717031]
- Zhejiang Provincial Natural Science Foundation of China [LY18F040006]
- Fundamental Research Funds for the Central Universities, SCUT [D2174770]
- Research Foundation from Hangzhou Dianzi University [KYS205618040]
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Tungsten disulfide (WS2), with indirect-direct bandgap transition when thinned down to atomically thin flake, provides intriguing applications in next-generation optoelectronics. Here, we develop a feasible approach to fabricate two-dimensional (2D) WS2 flakes by the evaporation and sulfurization of W film using S powder. The layer number and lateral dimension of the as-grown WS2 flakes are confirmed by Raman spectroscopy, photo-luminescence (PL), optical microscopy, and atomic force microscopy (AFM). The evolution of the layer number and edge length of the flakes is attributed to the concentration gradient of W vapor on the substrate surface in the atmosphere. Our result opens a novel pathway to fabricate other 2D transition metal dichalcogenides (TMDs) and construct 2D TMDs-based heterostructures.
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