Journal
CERAMICS INTERNATIONAL
Volume 40, Issue 1, Pages 2281-2286Publisher
ELSEVIER SCI LTD
DOI: 10.1016/j.ceramint.2013.07.148
Keywords
A. Films; C. Electrical properties; C. Ferroelectric properties; D. Perovskites
Categories
Funding
- Priority Research Centers Program through the National Research Foundation of Korea (NRF)
- Ministry of Education, Science and Technology [2010-0029634]
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Pure BiFeO3 (BFO) and (Dy, Zn) co-doped (Bi0.9Dy0.1)(Fe0.975Zn0.025)O3-delta (BDFZO) thin films were prepared on Pt(111)/Ti/SiO2/Si(100) substrates by a chemical solution deposition method. Effects of (Dy, Zn) co-doping on the structural and electrical properties of BFO were studied. Both the thin films were crystallized as randomly oriented polycrystalline distorted rhombohedral structures, with no detectable impurity and secondary phases. Large remnant polarization (2P(r)) of 47 mu E/cm(2), low coercive electric field (2E(c)) of 925 kV/cm at 1143 kV/cm and low leakage current density of 1.30 x 10(-6) A/cm(2) at 100 kV were measured for the BDFZO thin film. The improved electrical properties of the BDFZO thin film are ascribed to the stabilization of perovskite structure, defect complex formation between acceptors Zn2+ and oxygen vacancies of [(Zn-Fe3+(2+))'-(V-O2-(center dot center dot))], pronounced off-center displacement in the perovskite and structural distortion by the Dy and Zn ions doping. (C) 2013 Elsevier Ltd and Techna Group S.r.l. All rights reserved.
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