Journal
CERAMICS INTERNATIONAL
Volume 40, Issue 3, Pages 5079-5084Publisher
ELSEVIER SCI LTD
DOI: 10.1016/j.ceramint.2013.09.068
Keywords
Dielectric properties; Mechanical properties; Si3N4; Porous; Moisture resistance
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Funding
- National Natural Science Foundation of China [51209177]
- China Postdoctoral Science Foundation [2013T60891]
- Financial Grant for Science and Technology Young Star from Shaanxi Province [2013KJXX-14]
- Northwest AF University [QN2012024, 2011BSJJ083]
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For fabricating porous Si3N4-SiO2 ceramics with good moisture resistance and mechanical and dielectric properties, a technique combining oxidation bonding, sol gel directional infiltration and sintering is explored. The sol gel infiltration time has great effect on the microstructure and properties of the porous Si3N4-SiO2 ceramics. As the infiltration time increases, the porous Si3N4-SiO2 ceramics improve obviously in mechanical properties and decline little in dielectric properties. With the increase of infiltration time from 0.5 to 2.0 h, the porous Si3N4-SiO2 ceramics increase obviously in flexural strength from 46 to 121 MPa and in Vickers hardness from 2.4 to 5.3 GPa, increase slightly in dielectric constant from 3.32 to 3.76 and in dielectric loss from 3.36 x 10(-3) to 3.65 x 10(-3). Due to their dense surface, the porous Si3N4-SiO2 ceramics possess good resistances to moisture and mechanical shock. (C) 2013 Elsevier Ltd and Techna Group S.r.l. All rights reserved.
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