Electrical properties of niobium doped Bi4Ti3O12-SrBi4Ti4O15 intergrowth feffoelectrics

Nb-doped Bi4Ti3O12-SrBi4Ti4O15 intergrowth ceramics have been prepared by modified oxalate route. XRD phase analysis confirmed the formation of single phase compound. Nb-doping does not affect the basic crystal structure of the intergrowth. SEM micrographs showed that the grain size of the ceramics decreases with Nb-doping. The temperature dependence of dielectric constant and losses was investigated in the temperature range 30-800 degrees C and frequency range 1 kHz-1 MHz. With Nb-doping, the T-c of the ferroelectrics reduces and peak permittivity increases. Doping also introduces small relaxor behavior in the ferroelectrics. The dc conductivity of the ceramics decreases with doping. The remnant polarization (P-r) of the intergrowth ferroelectrics is increased with Nb doping. (c) 2013 Elsevier Ltd and Techna Group S.r.l. All rights reserved.