Journal
CERAMICS INTERNATIONAL
Volume 40, Issue 3, Pages 4753-4757Publisher
ELSEVIER SCI LTD
DOI: 10.1016/j.ceramint.2013.09.019
Keywords
Films; Microstructure; X-ray methods; Electrical properties
Categories
Funding
- National Natural Science Foundation of China [51002064]
- State Key Laboratory of Crystal Materials (Shandong University) [KF1108]
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The preferentially (100)-oriented 0.9Na(0.5)Bi(0.5)TiO(3)-0.1BiFeO(3) (NBT-BFO) solid solution thin films with and without Ce substitution were grown on a LaNiO3(100)/Si substrate via a metal organic decomposition method. The effects of Ce doping on the crystalline structure, leakage current and ferroelectric property of NBT-BFO thin film were investigated. The diffraction peaks of NBT-BFO shift to higher diffraction angle as a result of shrinkage in the unit-cell volume by Ce substitution. At higher electric fields, the NBT-BFO film presents Poole-Frenkel emission consistent with the high leakage current, whereas in the Ce-doped NBT-BFO film, the dominant mechanism is changed to space-charge-limited conduction, and the leakage current density is reduced by two orders of magnitude. Compared with rounded ferroelectric polarization hysteresis loops of NBT-BFO film, substantial enhancement of ferroelectricity has been achieved in Ce-doped NBT-BFO film, with a remanent polarization (P-r) of 32.3 mu C/cm(2). The capacitance voltage curves of Ce-doped NBT-BFO film show butterfly shape, and the degree of ferroelectricity is enhanced more and more with increasing applied voltage. (C) 2013 Elsevier Ltd and Techna Group S.r.l. All rights reserved.
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