Journal
CERAMICS INTERNATIONAL
Volume 39, Issue 3, Pages 2561-2566Publisher
ELSEVIER SCI LTD
DOI: 10.1016/j.ceramint.2012.09.016
Keywords
Thin film transistors; Oxide semiconductor; Al-In-Zn-O
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Funding
- National Research Foundation of Korea (NRF)
- Ministry of Education, Science and Technology [2011-0008716]
- Korea government(MEST) [2012011730]
- National Research Foundation of Korea [2011-0008716] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
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Al-In-Zn-O thin-film transistors were fabricated. To examine the effect of In composition, we adopted a co-sputtering method using Al-Zn-O and In2O3 targets. The sputtering power of In2O3 was varied to 200, 150, and 50W. The mobility and turn-on voltage of each device were 27.8 cm(2)V(-1) s(-1) and -4.2 V, 4.5 cm(2)V(-1) s(-1) and -3.5 V, 0.7 cm(2)V(-1) s(-1) and -3 V, respectively. We also investigated instabilities under negative gate bias stress (NBS) and negative bias illumination stress (NBIS). While the NBS was not influenced by the In contents, the NBIS characteristics were optimized for the device with In2O3 sputtering at 150 W. (C) 2012 Elsevier Ltd and Techna Group S.r.l. All rights reserved.
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