Journal
JOURNAL OF ELECTRON MICROSCOPY
Volume 51, Issue 3, Pages 167-171Publisher
OXFORD UNIV PRESS
DOI: 10.1093/jmicro/51.3.167
Keywords
STEM; EDX; specimen drift; phase correlation; arsenic
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We developed a specimen-drift-free energy-dispersive X-ray (EDX) mapping system in a scanning transmission electron microscope (STEM) to improve the sensitivity and spatial resolution of EDX elemental mapping images. The amount of specimen drift was analysed from two STEM images before and after specimen drift by using the phase-correlation method, and was compensated for with an image-shift deflector of the STEM by the displacement of the scanning electron beam. We applied this system to observe the two-dimensional distribution of low dose arsenic in silicon semiconductor devices. The sensitivity of the elemental mapping was improved to several tenths atomic % for arsenic atoms while maintaining a spatial resolution of 2 nm.
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