Journal
CERAMICS INTERNATIONAL
Volume 39, Issue 6, Pages 6223-6228Publisher
ELSEVIER SCI LTD
DOI: 10.1016/j.ceramint.2013.01.042
Keywords
BiFeO3; Sm-doping; Multiferroic; Phase transition
Categories
Funding
- National Natural Science Foundation of China [51172135]
- Young Scientists Fund of the National Natural Science Foundation of China [51002092]
- Research and special projects of the Education Department of Shaanxi Province [12JK0445]
- Graduate Innovation Fund of Shaanxi University of Science and Technology [SUST-A04]
Ask authors/readers for more resources
Pure polycrystalline Bi1-xSmxFeO3 (BSFO) (x=0-0.12) thin films were successfully prepared on FTO/glass substrates by the sol-gel method. The influence of Sm doping on the structure, dielectric, leakage current, ferroelectric and ferromagnetic properties of the BSFO films was investigated. X-ray diffraction analysis and FE-SEM images both reveal a gradual rhombohedra to pseudo-tetragonal phase transition with the increase of Sm dopant content. On one hand, a proper amount of Sm doping can decrease the leakage current densities of the BSFO thin films. On. the other hand, excess Sm substitution for Bi will lead to multiphase coexistence in the film, the lattice inhomogeneity results in more defects in the film, which can increase the leakage current density. The result shows that defects in the complexes lead to electric domain back-switching in the BSFOx=0.06 thin film, resulting in a decreased dielectric constant, leakage current and remanent polarization. The BSFQ(x=0.09) thin film is promising in practical application because of its highest dielectric constant, remanent polarization and remanent magnetization of 203-185, 70 mu C/cm(2) and 1.31 emu/cm(3), respectively. (C) 2012 Elsevier Ltd and Techna Group S.r.l. All rights reserved.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available