4.7 Article

Engineering grain size and electrical properties of donor-doped barium titanate ceramics

Journal

CERAMICS INTERNATIONAL
Volume 37, Issue 1, Pages 303-311

Publisher

ELSEVIER SCI LTD
DOI: 10.1016/j.ceramint.2010.08.040

Keywords

Electrical properties; Ceramics; Chemical synthesis; Crystal growth

Funding

  1. Power and Energy Division, of the U.S. Army's Communications-Electronics Research, Development and Engineering Center (CERDEC)
  2. U.S. Army Research Office [DAAD19-03-D-0004]
  3. U.S. Dept. of Energy [DEFG03-02ER46006]

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A semiconducting lanthanum-doped barium titanate ceramic has been fabricated for battery safety applications by simple means from nanoparticles prepared at room temperature by kinetically controlled vapor diffusion catalysis. The material, characterized by electron microscopy, X-ray diffraction and electrical measurements, exhibits a difficult to achieve combination of submicron grain size (similar to 500 nm) and attractive electrical properties of room temperature resistivity below 100 Omega cm and a 12-fold increase in resistivity through the Curie temperature (positive thermal coefficient of resistivity, PTCR). Systematic investigation of sintering conditions revealed that a short period of heating at 1350 degrees C under air is necessary to suppress abnormal grain growth, while precise control of the cooling rate is needed to achieve the targeted electrical properties. Cooling must be sufficiently fast to avoid complete back-oxidation, yet slow enough to facilitate oxygen adsorption at the grain boundaries to produce the thin oxide layer apparently responsible for the observed PTCR. (C) 2010 Elsevier Ltd and Techna Group S.r.l. All rights reserved.

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