Journal
CERAMICS INTERNATIONAL
Volume 35, Issue 7, Pages 2797-2801Publisher
ELSEVIER SCI LTD
DOI: 10.1016/j.ceramint.2009.03.032
Keywords
Optoelectrical properties; ZnO; Nanoparticles; Photodetectors
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Funding
- National R&D Project for Nano Science and Technology [10022916-2006-22]
- Center for Integrated-Nano-Systems (CINS) of the Korea Research Foundation [KRF-2006-005-J03601]
- Korea Ministry of Commerce, Industry and Energy
- Korea Science and Engineering Foundation (KOSEF) [ROA2005-000-10045-02]
- Nano RD Program [MI0703000980-07M0300-98010]
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Ultraviolet (UV) photodetectors based on ZnO nanoparticles (NPs) were fabricated and their optoetectronic properties were examined. The dominant photoluminescence (PL) peak of the ZnO NPs was located at a wavelength of 380 nm under the illumination of 325-nm wavelength light. The direct bandgap transition of the charge carriers at lambda = 380 nm contributed to the photocurrent. The ratio of the photocurrent to the dark current (on/off ratio) was as high as 10(6), which is favorable for photodetectors. The decay time constant in the photoresponse was relatively small, while the rise time constant was relatively large. The reasons for the high on/off ratio and photoresponse characteristics are discussed in this paper. (C) 2009 Elsevier Ltd and Techna Group S.r.l. All fights reserved.
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