Characteristics of La2O3 thin films deposited using metal organic chemical vapor deposition with different oxidant gas

La2O3 films were deposited using O-3 and the structural and electrical properties were investigated and compared with those of La2O3 films deposited using O-2. The deposition temperature of the La2O3 films using O-3 was slightly reduced compared to that of the La2O3 films generated using O-2. After a post-annealing process at 600 and 900 degrees C, the crystallinity of the La2O3 films using O-3 were smaller than that using O-2. The leakage current density increased after annealing at 600 degrees C due to densification and then decreased after annealing at 900 degrees C due to interfacial layer growth. The effective dielectric constant of the La2O3 films deposited using O-3 decreased at 900 degrees C due to interfacial layer growth. The La2O3 films deposited using O-3 showed better structural and electrical properties in this study. (c) 2007 Elsevier Ltd and Techna Group S.r.l. All rights reserved.