Journal
CERAMICS INTERNATIONAL
Volume 34, Issue 4, Pages 953-956Publisher
ELSEVIER SCI LTD
DOI: 10.1016/j.ceramint.2007.09.071
Keywords
MOCVD; ozone; post-annealing; La2O3
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La2O3 films were deposited using O-3 and the structural and electrical properties were investigated and compared with those of La2O3 films deposited using O-2. The deposition temperature of the La2O3 films using O-3 was slightly reduced compared to that of the La2O3 films generated using O-2. After a post-annealing process at 600 and 900 degrees C, the crystallinity of the La2O3 films using O-3 were smaller than that using O-2. The leakage current density increased after annealing at 600 degrees C due to densification and then decreased after annealing at 900 degrees C due to interfacial layer growth. The effective dielectric constant of the La2O3 films deposited using O-3 decreased at 900 degrees C due to interfacial layer growth. The La2O3 films deposited using O-3 showed better structural and electrical properties in this study. (c) 2007 Elsevier Ltd and Techna Group S.r.l. All rights reserved.
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