Journal
JOURNAL OF CRYSTAL GROWTH
Volume 234, Issue 2-3, Pages 323-326Publisher
ELSEVIER SCIENCE BV
DOI: 10.1016/S0022-0248(01)01712-2
Keywords
metalorganic chemical vapor deposition; organometallic vapor phase epitaxy; arsenides; gallium compounds; nitrides; semiconducting III-V materials
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Two nitrogen precursors (NF3 and u-dimethylhydrazine) and two gallium precursors (trimethylgallium and triethylgallium) are explored for the growth of GaAs1-xNx by metal-organic, chemical-vapor deposition. The carbon and hydrogen impurity levels are relatively unaffected by changing nitrogen precursors, but the use of triethylgallium decreases the carbon contamination. These lower carbon levels are not correlated with a significant change in the background hole concentration except for x<0.2%. The photoluminescence and Hall data for as-grown GaAsN are also unaffected by the choice of nitrogen precursor. Published by Elsevier Science B.V.
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