Relation between microscopic defects and macroscopic changes in silicon detector properties after hadron irradiation

Silicon detectors produced from materials with different resistivities and oxygen concentrations have been irradiated with energetic neutrons, protons and pions. Isothermal annealing studies have shown correlation between microscopic defect evolution and the macroscopic detector performance. It was found that the annealing behavior of the electron traps attributed to the single and double charged divacancy is strongly related to the current related damage parameter :. In both cases the isothermal evolution is independent of the oxygen and doping concentration in the material under investigation (2 x 10(14) < [O] < 10(18) cm(3) and 10(12) < [P] < 4 x 10(13) cm(3)) and the absolute values do not depend on the particles used for the irradiation provided the fluence is properly normalized by the nonionizing energy loss (NIEL). In contrast to this result the introduction rates of the observed point defects VO1 and C1C3 were however found to depend on the particle type. Thus clear indication is given that the generation of point defects does not scale with NIEL. Compared to neutron irradiated samples the introduction rate after irradiation with charged hadrons was found to be higher by a factor around 2. (C) 2002 Elsevier Science B.V. All rights reserved.