Journal
PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES
Volume 13, Issue 2-4, Pages 301-304Publisher
ELSEVIER SCIENCE BV
DOI: 10.1016/S1386-9477(01)00543-4
Keywords
quantum dot; intersubband; photocurrent
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In this contribution we present a normal-incidence quantum dot (QD) infrared detector structure. It is based on intra-conduction band transitions between the p-states of the QD and the wetting layer subband and lateral transport of photoexcited carriers in a channel next to the quantum dot layers. The photoresponse is peaked at 6.5 mum (186 meV) and reaches several A/W up to 60 K. The intrinsic detector response time is determined to be about 0.8 ms. Temperature and frequency dependence of the detector structure are discussed. (C) 2002 Elsevier Science B.V. All rights reserved.
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