Journal
PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES
Volume 13, Issue 2-4, Pages 995-998Publisher
ELSEVIER SCIENCE BV
DOI: 10.1016/S1386-9477(02)00287-4
Keywords
nanowires; nanostructurcs; chemical vapor depositions; self-assembly
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When Ti is deposited on Si in the 600-700degreesC temperature range, the lattice mismatch between the Ti-containing deposit and the Si substrate causes TiSix, nanoislands to form. The nanoislands grow when annealed at temperatures above 800degreesC, When the nanoislands (either unannealed or annealed) are exposed to a Si-containing precursor gas, the Ti catalyzes the decomposition of the gas, allowing one-dimensional nanowires to grow. If oxide-pattemed Si substrates are used, the Ti islands form selectively on the exposed Si and are preferentially positioned near the pattern edges, The subsequently grown Si nanowires are, therefore, positioned with respect to the larger lithographically formed pattern. Exposing the wires to an ion beam after deposition promotes the parallel alignment of nanowires. (C) 2002 Elsevier Science B.V. All rights reserved.
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