4.4 Article

The structure and properties of Mn3O4 thin films grown by MOCVD

Journal

SOLID STATE COMMUNICATIONS
Volume 124, Issue 1-2, Pages 15-20

Publisher

PERGAMON-ELSEVIER SCIENCE LTD
DOI: 10.1016/S0038-1098(02)00470-2

Keywords

thin films; epitaxy; scanning and transmission electron microscopy; phase transitions

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The results of the simultaneous deposition of Mn3O4 films 100 nm thick at 750 degreesC and P(O-2) = 1 mbar by MOCVD on three different single crystal substrates (MgO, LaAlO3 and SrTiO3) are considered. Using X-ray diffraction, Raman spectrometry, high-resolution transmission electron microscopy and magnetic measurements we have demonstrated that the films grown on MgO differ greatly from the stable tetragonal bulk form of Mn3O4 (hausmannite) and are very similar to the high-temperature cubic form with the suppressed Jahn-Teller distortion in manganese-oxygen octahedra. The hausmannite films of the mixed orientations were grown on perovskite substrates. The experimental results are discussed in the framework of the epitaxial stabilization model. (C) 2002 Elsevier Science Ltd. All rights reserved.

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