Journal
SOLID STATE COMMUNICATIONS
Volume 121, Issue 9-10, Pages 549-554Publisher
PERGAMON-ELSEVIER SCIENCE LTD
DOI: 10.1016/S0038-1098(01)00481-1
Keywords
semiconductors; electronic band structure; optical properties
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The imaginary parts of the dielectric functions epsilon(2)(omega) are calculated for wurtzite CdSe and GaN within the one-electron approximation using the linear muffin-tirt-orbital method and analyzed in terms of separate band-to-band contributions and critical points, Differences and similarities are pointed out. The effects of excitonic enhancement at critical points are discussed. (C) 2002 Elsevier Science Ltd. All rights reserved.
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