Journal
IEEE TRANSACTIONS ON ELECTRON DEVICES
Volume 49, Issue 1, Pages 155-163Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TED.2002.1291850
Keywords
high temperature; high voltage; junction passivation; leakage current; semiconductor device
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At this time, little importance is given to the surface component of reverse leakage current of silicon pn-junctions although reliability issues reveal device blocking weakness when performing at high voltage and temperature. Junctions which have almost the same perimeter but different area have been realized and their reverse current has been measured at room temperature and high temperature both for standard recovery and fast recovery (gold-doped or electron irradiated) pn-junctions. It is shown that for standard recovery junctions the surface component of the, reverse current is the primary component from room temperature up to above 150 degreesC and has influence on reaching high permissible working voltages. For gold-doped or electron irradiated junctions, the bulk component is dominant at high junction temperature, but it is shown that a comparatively negligible surface component can impose lower reverse working voltages or lower junction operation temperature. The surface component may be a cause of limitation on the operation of power silicon diodes at high reverse voltage above 175-200 degreesC junction temperature.
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