4.7 Article

Sintering and grain growth of CoO-doped CeO2 ceramics

Journal

JOURNAL OF THE EUROPEAN CERAMIC SOCIETY
Volume 22, Issue 1, Pages 27-34

Publisher

ELSEVIER SCI LTD
DOI: 10.1016/S0955-2219(01)00240-0

Keywords

CeO2; CoO doping; grain growth; microstructure-final; sintering

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Co-doped CeO2 powders with atomic ratios equal to 0.25, 1 and 3% were synthesized by the conventional mixed-oxide method. No binary compounds were detected in the CeO2-CoO system, and the Co element exists as the state of Co2+ in the samples sintered above 1000 degreesC. A small amount of Co doping reduces sintering temperatures and promotes grain boundary mobility dramatically. Over 99.0% of relative density (R.D.) can be obtained for 0.25% Co-doped sample sintered at 1300 degreesC for 2 h, compared with similar to 96% of relative density for pure CeO2 sintered at 1525 degreesC for 2 h. The results from grain growth kinetics study indicate that grain growth exponent, n, and activation energy, Q, are 3 and 697 +/- 37 U/mol for pure CeO2, 4 and 572 +/- 57 kJ/mol for 0.25% Co-doped CeO2, respectively. (C) 2001 Elsevier Science Ltd. All rights reserved.

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