Journal
JOURNAL OF THE EUROPEAN CERAMIC SOCIETY
Volume 22, Issue 1, Pages 93-99Publisher
ELSEVIER SCI LTD
DOI: 10.1016/S0955-2219(01)00248-5
Keywords
defects; dielectric properties; powders; SiC; sol-gel processes
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In this paper, the dielectric properties of nano-sized SiC powders have been investigated in the GHz frequency range. The polytypes of SiC have been changed from beta type (3C) to alpha type (12H and 21R) by varying the aluminum contents and the reaction atmospheres. The beta -SiC powder has much higher relative permittivity (epsilon (r)' = 30 similar to 50) and loss tangent (tg delta = similar to 0.7) than alpha -SiC powders. Though the doping of At and N decrease the resistivity of SiC to the order of 10(2) Omega cm, the pivotal factor on the dielectric behaviors is ion jump and dipole relaxation, namely the reorientation of lattice defect pairs (V-Si-V-C, Si-C-C-Si). The conductivity of SiC has little effect on the dielectric behaviors. (C) 2001 Elsevier Science Ltd. All rights reserved.
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