Electrical properties of graphite/homoepitaxial diamond contact

We have studied the electrical properties of the graphitic electrodes formed in sulfur- and boron-doped homoepitaxial diamond films in order to make reliable ohmic contact's in diamond-based electronic devices. Sulfur-doped diamond films were achieved by sulfur ion implantation in undoped homoepitaxial diamond films. Boron-doped homoepitaxial diamond films were synthesized by gas-phase doping of boron during the chemical vapor deposition growth. The graphitization of diamond by Ar ion implantation was utilized for the graphitic electrodes. The electrical properties of graphite/diamond contacts were investigated by using the current-voltage measurement. The specific contact resistances were characterized by applying the linear transmission line model (TLM) and circular TLM extrapolation methods, and were determined to be 5.2 x 10(3) and 1.18 Omega.cm(2), respectively. (C) 2002 Elsevier Science B.V. All rights reserved.